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Related Concept Videos

Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Electrical Transport01:29

Electrical Transport

The electrical transport property of a material is defined by its resistance and conductivity. Resistance is the measure of a material's ability to resist the flow of electric current, while conductivity gauges its ability to allow the current to pass through, depending on the geometry of the measurement cell, such as electrode spacing and area. Conductivity is measured in Siemens (S). There are different types of conductance, including specific conductance, equivalent conductance, and molar...
The Electrical Double Layer01:30

The Electrical Double Layer

In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...
Band Theory02:35

Band Theory

When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...

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Related Experiment Video

Updated: Jun 3, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Disorder and electronic transport in graphene.

E R Mucciolo1, C H Lewenkopf

  • 1Department of Physics, University of Central Florida, Orlando, FL 32816-2385, USA. mucciolo@physics.ucf.edu

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|March 15, 2011
PubMed
Summary

This review explores electronic transport in disordered graphene, detailing how band structure and symmetries influence conductivity. It covers disorder types, localization, and carrier density effects, highlighting open research questions.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science

Background:

  • Graphene's unique electronic properties are significantly affected by structural imperfections.
  • Understanding electronic transport in disordered systems is crucial for developing advanced graphene-based devices.

Purpose of the Study:

  • To review recent theoretical and experimental progress in electronic transport within disordered graphene.
  • To elucidate the relationship between disorder characteristics and transport phenomena in graphene.

Main Methods:

  • Theoretical analysis focusing on band structure properties and lattice symmetries.
  • Examination of various types of disorder, including short-range and long-range.
  • Discussion of localization effects (strong and weak) and their impact on conductivity.

Main Results:

  • Disorder significantly alters graphene's electronic transport properties.
  • Band structure and lattice symmetries play a key role in determining transport behavior.
  • Localization phenomena and carrier density dependence of conductivity are critical aspects.

Conclusions:

  • Recent advancements provide a deeper understanding of electronic transport in disordered graphene.
  • Further research is needed to address open problems related to localization and conductance fluctuations.