Related Experiment Video
Updated: Jun 3, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Linear response spin admittance of a quantum dot subject to a spin bias
1Department of Physics, University of Sofia, 1126 Sofia, Bulgaria. tzanko@phys.uni-sofia.bg
Abstract:
We compute the linear response spin admittance of a non-equilibrium quantum dot subject to a spin bias and an ac charge bias with small amplitude. As a function of the position of the resonant level (i.e. the gate voltage) the spin admittance shows a set of two peaks around the gate voltage at which the resonant or the upper level of the dot is in the vicinity of the equilibrium Fermi level in the leads. The peak heights can be related to the average number of quantum dot electrons. The frequency dependence of the spin admittance shows features resulting from the photon-assisted tunneling through the dot.
Related Concept Videos
Atomic Nuclei: Nuclear Spin State Overview
Spin–Spin Coupling Constant: Overview
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must have a...
The Pauli Exclusion Principle
NMR Spectroscopy: Spin–Spin Coupling
Valence Bond Theory
Atomic Nuclei: Nuclear Spin State Population Distribution

