Nitrogen and argon doped zinc oxide
C Silva1, A R G Costa, M M Cruz
1Centro de Física da Matéria Condensada da Universidade de Lisboa, Campo Grande, Lisboa, Portugal.
Summary
Argon and nitrogen implantation in zinc oxide (ZnO) creates temporary magnetic defects. Argon implantation results in detectable charge carriers after annealing, unlike nitrogen implantation.
Area of Science:
- Materials Science
- Solid State Physics
- Semiconductor Physics
Background:
- Zinc oxide (ZnO) is a semiconductor with potential applications in spintronics.
- Investigating the effects of non-magnetic ion implantation is crucial for understanding defect-induced magnetism and electrical properties in ZnO.
Purpose of the Study:
- To compare the influence of argon and nitrogen implantation on the magnetic and electrical behavior of ZnO single crystals.
- To determine the stability of induced magnetic defects upon annealing.
Main Methods:
- Single crystal ZnO samples were implanted with argon and nitrogen ions.
- Magnetic and electrical properties were characterized before and after annealing.
Main Results:
- Both argon and nitrogen implantation induced magnetic defects in ZnO.
- These induced magnetic defects were not stable upon annealing.
- Mobile charge carriers were detected in argon-implanted ZnO after annealing, but not in nitrogen-implanted ZnO.
Conclusions:
- Non-magnetic ion implantation can introduce transient magnetic properties in ZnO.
- The electrical conductivity of ZnO is differently affected by argon and nitrogen implantation, suggesting distinct defect mechanisms.
More Related Videos
08:14Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited
Zn1-xMgxO
Published on: July 31, 2016
09:32Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells
Published on: April 25, 2018
