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Updated: Jun 3, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Two-dimensional graphene with structural defects: elastic mean free path, minimum conductivity, and Anderson
Aurélien Lherbier1, Simon M-M Dubois, Xavier Declerck
1Institute of Condensed Matter and Nanoscience (IMCN), Université Catholique de Louvain (UCL), Louvain-la-Neuve, Belgium.
Disordered graphene with structural defects exhibits quantum transport properties. Conductivity saturates at high defect densities, and Anderson localization may be measurable at low defect levels.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Graphene's unique electronic properties are sensitive to structural defects.
- Understanding quantum transport in disordered graphene is crucial for electronic applications.
Purpose of the Study:
- Investigate quantum transport in graphene with Stone-Wales and divacancy defects.
- Determine the impact of defect nature and density on conductivity and localization.
Main Methods:
- Utilized a realistic π-π* tight-binding model derived from ab initio calculations.
- Employed an order-N real-space Kubo-Greenwood method to compute transport properties.
- Calculated mean free paths and semiclassical conductivities as a function of defect density.
Main Results:
- Semiclassical conductivities predicted to saturate at a minimum value (4e2/πh) with increasing defect density.
- This saturation occurs over a broad carrier density range (>0.5×10^14 cm^-2).
- Quantum interference effects suggest Anderson localization is potentially measurable at defect densities as low as 1%.
Conclusions:
- Structural defects significantly influence quantum transport in graphene.
- Graphene's conductivity exhibits a robust minimum value under high defect concentrations.
- Anderson localization in graphene is experimentally accessible at low defect levels, opening avenues for novel electronic devices.
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