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Updated: Jun 3, 2026
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Conductance of graphene-based double-barrier nanostructures
1Department of Campus of Bijar, University of Kurdistan, Bijar, Iran. Rezakord@ipm.com
Abstract:
The effect of a mass gap on the conductance of graphene double-barrier heterojunctions is studied. By obtaining the 2D expression for the electronic transport of the low energy excitations of pure graphene through double-barrier systems, it is found that the conductivity of these structures does not depend on the type of charge carriers in the zones of the electric field. However, a finite induced gap in the graphene spectrum makes conductivity dependent on the energy band index. We also discuss a few controversies concerning double-barrier systems stemming from an improper choice of the scattering angle. Then it is observed that, for some special values of the incident energy and potential's height, graphene junctions behave like left-handed materials, resulting in a maximum value for the conductivity.
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