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Published on: December 3, 2013
Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As
1Department of Applied Physics, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden.
Abstract:
Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.
