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Published on: April 12, 2018
Role of substrate wettability in the "bubble deposition method" applied to the CeVO4 nanowire films
Claire Costa-Coquelard1, Pascale Jegou, Jean-Jacques Benattar
1Service de Physique de L'Etat Condensé, DSM/IRAMIS/SPEC, CEA, 91191 Gif sur Yvette Cedex, France.
Abstract:
Homogeneous two-dimensional structures of CeVO(4) nanowires (NWs) deposited on silicon substrates are obtained by means of the bubble deposition method (BDM). Surface wettability (i.e., surface energy) and film ripening (i.e., film thickness) are two major parameters in nanoparticle confinement and deposition. As the presence of surfactant could be detrimental to applications, a washing treatment is developed without CeVO(4) chemical changes or NW film modifications. Careful investigations of the film topography are carried out by atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) is used to check the chemical composition of the film at different stages. Finally, samples made by BDM are compared to those made by dip-coating method, demonstrating the higher efficiency of the BDM in providing large areas of well-organized and dense CeVO(4) monolayer.

