Coupled quantum dot-ring structures by droplet epitaxy
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
C Somaschini1, S Bietti, N Koguchi
1L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano Bicocca, Via Cozzi 53, I-20125 Milano, Italy.
Nanotechnology
|March 19, 2011
Abstract:
The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface. Such a procedure permits the combination of quantum dots and quantum rings into a single, multi-functional, complex quantum nanostructure.
