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Related Experiment Video

Updated: Jun 3, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

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Published on: August 29, 2025

Low-temperature, high-performance, solution-processed indium oxide thin-film transistors.

Seung-Yeol Han1, Gregory S Herman, Chih-hung Chang

  • 1School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, Oregon 97331, USA.

Journal of the American Chemical Society
|March 23, 2011
PubMed
Summary
This summary is machine-generated.

Solution-processed indium(III) oxide (In2O3) thin-film transistors (TFTs) achieve high performance. Annealing in an oxygen/ozone (O2/O3) atmosphere boosts TFT characteristics at lower temperatures.

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Area of Science:

  • Materials Science
  • Electronics
  • Nanotechnology

Background:

  • Indium(III) oxide (In2O3) is a promising n-type semiconductor for thin-film transistors (TFTs).
  • Solution-processed fabrication methods offer cost-effective and scalable alternatives to traditional vacuum-based techniques.

Purpose of the Study:

  • To develop high-performance In2O3 thin-film transistors (TFTs) using a solution-based spin-coating method.
  • To investigate the effect of annealing atmosphere and temperature on the electrical properties of In2O3 TFTs.

Main Methods:

  • Fabrication of In2O3 thin films via spin-coating using indium(III) chloride (InCl3) precursor in acetonitrile, with ethylene glycol addition for film uniformity.
  • Annealing of In2O3 thin films at temperatures from 200 to 600 °C in air or an O2/O3 atmosphere.
  • Characterization of TFT performance, including field-effect mobility and on/off current ratio.

Main Results:

  • TFTs annealed at 500 °C in air showed a high field-effect mobility of 55.26 cm2 V(-1) s(-1) and an I(on)/I(off) ratio of 10(7).
  • In2O3 TFTs annealed in O2/O3 at 200–300 °C exhibited excellent n-type behavior with mobilities of 0.85–22.14 cm2 V(-1) s(-1) and I(on)/I(off) ratios of 10(5)–10(6).
  • The O2/O3 annealing atmosphere significantly enhanced TFT performance at lower processing temperatures.

Conclusions:

  • Solution-processed In2O3 TFTs can achieve high performance comparable to vacuum-processed devices.
  • Annealing in an O2/O3 atmosphere is an effective strategy to improve the electrical properties of In2O3 TFTs at reduced temperatures.
  • This work demonstrates a viable low-temperature fabrication route for high-performance In2O3-based electronics.