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Broadband light-induced absorbance change in multilayer graphene
Petr A Obraztsov1, Maxim G Rybin, Anastasia V Tyurnina
1Department of Physics and Mathematics, University of Eastern Finland, Joensuu, Finland.
Nano Letters
|March 30, 2011
Summary
Ultrafast light absorption changes were observed in chemical vapor deposition-grown multilayer graphene. These changes, driven by Auger recombination and impact ionization, significantly impact photoexcited carrier dynamics.
Area of Science:
- Condensed matter physics
- Materials science
- Optoelectronics
Background:
- Graphene exhibits unique optoelectronic properties due to its electronic band structure.
- Understanding carrier dynamics in graphene is crucial for advanced optical and electronic devices.
Purpose of the Study:
- To investigate the ultrafast light-induced absorbance changes in chemical vapor deposition (CVD)-grown multilayer graphene.
- To elucidate the mechanisms governing photoexcited carrier dynamics in graphene.
Main Methods:
- Femtosecond pump-probe spectroscopy was employed.
- Measurements were conducted in the 1100-1800 nm spectral range.
Main Results:
- Broadband absorbance changes were observed when probe photon energy exceeded pump photon energy.
- The results indicate significant carrier dynamics influenced by nonlinear optical processes.
Conclusions:
- Auger recombination and impact ionization are key mechanisms in photoexcited carrier dynamics in graphene.
- The findings provide insights into the nonlinear optical response of multilayer graphene for potential applications.
