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Ohmic contact of cadmium oxide, a transparent conducting oxide, to n-type indium phosphide
Fang Ou1, D Bruce Buchholz, Fei Yi
1Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA. f-ou@northwestern.edu
ACS Applied Materials & Interfaces
|March 30, 2011
Abstract:
Good ohmic contact to n-type indium phosphide (n-InP) with cadmium oxide (CdO), a transparent conducting oxide (TCO), has been achieved. Hydrogen plasma surface pretreatment of the n-InP substrate, prior to the pulsed laser deposition (PLD) of the CdO film, is key to achieving ohmic contact. On substrates pretreated with a hydrogen plasma, contact resistances as low as (6.8 ± 2.8) × 10(-6) Ω cm(2) are obtained.

