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Updated: Jun 3, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Schottky diode fabricated on a single crystalline diamond rod
Jian-You Lin1, Wen-Kai Lin, Jon-Yiew Gan
1Department of Materials Science and Engineering, National Tsing Hua University, Hsin-Chu City, Taiwan, Republic of China.
Abstract:
The fabrication process of Al/diamond Schottky diodes on single crystalline diamond rods (SCDRs) was demonstrated. SCDRs of submicron diameters were obtained by etching a polished polycrystalline diamond film in oxygen plasma. The as-scratched SCDR was confirmed to be single crystalline diamond by electron diffraction measurements showing the same fuzzy spot pattern at different parts of an SCDR. Each SCDR was extracted from a grain in the polycrystalline film where the grain size served as a limit of the length of an SCDR. Al/Ti and Al metals were deposited to form ohmic and Schottky contacts, respectively. A hydrogen plasma treatment is an essential step prior to the formation of an Al/diamond Schottky contact in order to improve the device performance. The submicron scale Al/diamond Schottky diode exhibits a very high current density of 1.4 × 10(4) A cm(-2) at a forward bias (V(F)) voltage of - 3 V.
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