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Robust level-set-based inverse lithography.

Yijiang Shen1, Ningning Jia, Ngai Wong

  • 1Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong.

Optics Express
|March 30, 2011
PubMed
Summary
This summary is machine-generated.

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This study introduces a robust inverse lithography technology (ILT) method for microlithography. It enhances pattern reliability by accounting for process variations like defocus and aberration.

Area of Science:

  • Applied Mathematics
  • Optical Engineering
  • Semiconductor Manufacturing

Background:

  • Inverse Lithography Technology (ILT) is crucial for advanced semiconductor manufacturing.
  • Traditional ILT methods struggle with process variations like defocus and aberration.
  • Partially coherent systems present unique challenges for photomask design.

Purpose of the Study:

  • To develop a level-set based ILT framework for partially coherent systems.
  • To enhance the robustness of photomask designs against process variations.
  • To incorporate defocus and aberration into the ILT optimization process.

Main Methods:

  • Utilizing a time-dependent model and partial differential equations with finite difference schemes.
  • Developing an expectation-orientation optimization framework.

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Functional Surface-immobilization of Genes Using Multistep Strand Displacement Lithography
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Published on: October 25, 2018

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Last Updated: Jun 3, 2026

Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices
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Published on: January 27, 2017

Large-area Scanning Probe Nanolithography Facilitated by Automated Alignment and Its Application to Substrate Fabrication for Cell Culture Studies
09:45

Large-area Scanning Probe Nanolithography Facilitated by Automated Alignment and Its Application to Substrate Fabrication for Cell Culture Studies

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Functional Surface-immobilization of Genes Using Multistep Strand Displacement Lithography

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  • Weighting the cost function by random process condition variables including defocus and aberration.

    • Main Results:

    • Demonstrated the effectiveness of level-set based ILT in partially coherent systems.
    • Showcased enhanced robustness of layout patterns against process variations.
    • Presented benefits of defocus-aberration-aware ILT for improved yield.

    Conclusions:

    • Level-set based ILT offers a powerful approach for designing robust photomasks.
    • Accounting for process variations significantly improves pattern fidelity in microlithography.
    • The developed framework provides a pathway for more reliable semiconductor manufacturing.