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Updated: Jun 3, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Nonvolatile memory characteristics of WSi2 nanocrystals embedded in SiO2 dielectrics
Ki Bong Seo1, Dong Uk Lee, Seung Jong Han
1Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea.
Abstract:
A nano-floating gate capacitor with WSi2 nanocrystals embedded in SiO2 dielectrics was fabricated. The WSi2 nanocrystals were created from ultrathin WSi2 film during rapid thermal annealing process and their average size and density were about 2.5 nm and 3.59 x 10(12) cm(-2), respectively. The flat-band voltage shift due to the carrier charging effect of WSi2 nanocrystals were measured up to 5.9 V when the gate voltage sweep in the range of +/- 9 V. The memory window was decreased from 3.7 V to 1.9 V after 1 h and remained about 3.7 V after 10(5) programming/erasing cycles. These results show that there is a possibility for the WSi2 nanocrystals to be applied to nonvolatile memory devices.
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