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Considerations for the implementation of 2D protein based memory.

Matthew Hudgins¹, Sakhrat Khizroev

¹Department of Electrical Engineering, University of California, Riverside, California 92521, USA.

Journal of Nanoscience and Nanotechnology

|April 1, 2011

Summary

This summary is machine-generated.

Double erasure in Monolayer Bacteriorhodopsin (BR) films causes 755 nm light emission when transitioning from the Q-state to the ground state using blue light. This research explores requirements for next-generation Protein-Based Memory devices.

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Area of Science:

Biophysics
Materials Science
Optoelectronics

Background:

Monolayer Bacteriorhodopsin (BR) films exhibit unique photochromic properties.
The ultra-stable Q-state in BR has potential applications in data storage.
Understanding light-induced transitions is crucial for developing novel memory devices.

Purpose of the Study:

To investigate the effect of double erasure on Monolayer BR films.
To determine the conditions for light emission from the BR Q-state.
To analyze the feasibility of BR films for Protein-Based Memory (PBM) devices.

Main Methods:

Studied photonic excitation and double erasure effects on BR films.
Investigated light emission during Q-state to ground state transitions.
Utilized the finite element method to simulate optical intensity in nano-aperture waveguides.
Calculated minimum optical power for photochromic transitions.

Main Results:

Pronounced 755 nm light emission occurs when BR transitions from the Q-state to the ground state via blue light irradiation.
Simulations analyzed optical intensity distributions for Red, Green, and Blue light in nano-aperture waveguides.
The minimum output power required for photochromic transition in BR was calculated to be 20-27 nW on a 30 nm spot.

Conclusions:

Monolayer BR films show promise for next-generation Protein-Based Memory devices.
Specific light conditions are required to induce desired photochromic transitions for memory applications.
Nano-aperture transducers are viable for use in BR-based memory devices.