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50 Gb/s hybrid silicon traveling-wave electroabsorption modulator
Yongbo Tang1, Hui-Wen Chen, Siddharth Jain
1Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA. ytang@ece.ucsb.edu
Optics Express
|April 1, 2011
Summary
We developed a new hybrid silicon traveling-wave electroabsorption modulator. This device achieves a 42 GHz bandwidth and 50 Gb/s data rates, improving silicon photonic integrated circuits.
Area of Science:
- Photonics
- Electrical Engineering
- Materials Science
Background:
- Photonic integrated circuits (PICs) are crucial for high-speed data transmission.
- Electroabsorption modulators (EAMs) are key components in PICs for modulating optical signals.
- Existing EAMs face limitations in bandwidth and energy efficiency for next-generation networks.
Purpose of the Study:
- To demonstrate a novel traveling-wave electroabsorption modulator (TW-EAM) on a hybrid silicon platform.
- To enhance modulation efficiency and bandwidth for high-speed optical communication.
- To improve compatibility with silicon-based photonic integrated circuits.
Main Methods:
- Fabrication of a traveling-wave electroabsorption modulator using a hybrid silicon platform.
- Characterization of the device's small-signal electro/optical response.
- Testing the modulator's performance at a data transmission rate of 50 Gb/s.
Main Results:
- Achieved a 3 dB bandwidth of approximately 42 GHz for a 100 μm active segment.
- Demonstrated a modulation efficiency of 23 GHz/V.
- Obtained a dynamic extinction ratio of 9.8 dB with a low driving voltage swing of 2 V at 50 Gb/s.
Conclusions:
- The developed hybrid silicon TW-EAM offers significant performance improvements.
- The device shows great potential for integration into silicon-based PICs for advanced optical communication systems.
- This advancement contributes to the development of more efficient and higher-speed optical modulators.
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