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Updated: Jun 3, 2026

Quantum State Engineering of Light with Continuous-wave Optical Parametric Oscillators
Published on: May 30, 2014
Spurious mode reduction in dual injection-locked optoelectronic oscillators.
O Okusaga1, E J Adles, E C Levy
1US Army Research Laboratory, Adelphi, Maryland, USA. olukayode.okusaga@us.army.mil
Dual injection-locked optoelectronic oscillators (DIL-OEOs) effectively suppress spurious modes in X-band radio frequency (RF) signals. This research details DIL-OEO construction and optimization, achieving significant spur reduction without compromising phase noise.
Area of Science:
- Photonics
- Electrical Engineering
- Signal Processing
Background:
- Optoelectronic oscillators (OEOs) are key for low phase noise radio frequency (RF) signal generation.
- X-band OEOs face challenges with narrow-spaced spurious modes (spurs) due to long delay lines, hindering RF filter applicability.
- The dual injection-locked OEO (DIL-OEO) architecture is proposed to mitigate these spur issues.
Purpose of the Study:
- To detail the construction and experimental characterization of a DIL-OEO.
- To systematically study the injection-locking dynamics within DIL-OEOs.
- To optimize the DIL-OEO for simultaneous low phase noise and spur suppression at X-band frequencies.
Main Methods:
- Detailed description of the DIL-OEO experimental setup.
- Systematic experimental investigation of injection-locking parameters.
- Optimization of DIL-OEO design based on experimental data.
Main Results:
- Successful construction and characterization of a DIL-OEO.
- Experimental validation of injection-locking principles in the DIL-OEO configuration.
- Achieved significant suppression of nearest-neighbor spurs (60 dB) at 10 GHz.
- Demonstrated spur suppression without detrimental effects on phase noise within 1 kHz offset.
Conclusions:
- The DIL-OEO is a viable architecture for overcoming spurious mode limitations in high-frequency OEOs.
- Optimization through systematic study enables simultaneous achievement of low phase noise and spur reduction.
- The presented DIL-OEO design offers a practical solution for generating high-purity RF signals in the X-band.
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