Characteristics and fabrication of vertical type organic light emitting transistor using dimethyldicyanoquinonediimine (DMDCNQI) as a n-type active layer and light emitting polymer

We have investigated electrical properties of vertical type organic transistor using dimethyldicyanoquinonediimine (DMDCNQI) as a n-type active layer. And also, the contact resistance Ro for charge injection from a metal electrode to an organic semiconductor layer was studied by transfer line method. The radiance of organic light emitting transistor (OLET) consisting of glass/ITO (drain)/PEDOT:PSS/MEH-PPV/DMDCNQI/Al (gate)/DMDCNQI/Au (source) can be effectively controlled by applying gate voltage like depletion mode.