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Updated: Jun 3, 2026

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
Published on: June 18, 2013
Axial InP nanowire tandem junction grown on a silicon substrate
Magnus Heurlin1, Peter Wickert, Stefan Fält
1Division of Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden. magnus.heurlin@ftf.lth.se
Abstract:
Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal-organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.
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