A combined ion-sputtering and electron-beam annealing device for the in vacuo postpreparation of scanning probes
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Published on: September 27, 2017
Georg Eder1, Stefan Schlögl, Klaus Macknapp
1Department of Earth and Environmental Sciences and Center for NanoScience (CeNS), Ludwig-Maximilians-University, Theresienstrasse 41, 80333 Munich, Germany.
Abstract:
We describe the setup, characteristics, and application of an in vacuo ion-sputtering and electron-beam annealing device for the postpreparation of scanning probes (e.g., scanning tunneling microscopy (STM) tips) under ultrahigh vacuum (UHV) conditions. The proposed device facilitates the straightforward implementation of a common two-step cleaning procedure, where the first step consists of ion-sputtering, while the second step heals out sputtering-induced defects by thermal annealing. In contrast to the standard way, no dedicated external ion-sputtering gun is required with the proposed device. The performance of the described device is demonstrated by SEM micrographs and energy dispersive x-ray characterization of electrochemically etched tungsten tips prior and after postprocessing.
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