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Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
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Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor.

J A Griffiths1, D Chen, R Turchetta

  • 1Department of Medical Physics and Bioengineering, University College London, London WC1E 6BT, United Kingdom. j.griffiths@mpb.ucl.ac.uk

The Review of Scientific Instruments
|April 5, 2011
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Summary

This study presents an intensified CMOS active pixel sensor (APS) for low-light imaging. The system demonstrates suitability for low-light applications, with performance metrics analyzed across various gain levels.

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Area of Science:

  • Optoelectronics
  • Image Sensors
  • Low-Light Imaging

Background:

  • Development of intensified CMOS active pixel sensor (APS) for low-light applications.
  • Coupling of a high-gain, fast-light decay image intensifier to a prototype VANILLA APS via fiber optics.

Purpose of the Study:

  • To investigate the performance parameters of the intensified VANILLA APS system.
  • Evaluation under uniform 520 nm green light illumination across a range of image intensifier gain levels.

Main Methods:

  • Utilized mean-variance analysis to assess sensor performance.
  • Characterized parameters including saturation, variance, quantum efficiency, and dynamic range.

Main Results:

  • APS saturation observed around 3050 Digital Units (DU).
  • Maximum variance increased with image intensifier gain.
  • Quantum efficiency varied exponentially from 260 to 1.6 across gain levels.
  • Usable dynamic range decreased from 60 dB to 40 dB at higher gains.

Conclusions:

  • The intensified VANILLA APS system exhibits suitability for low-light imaging applications.
  • Performance characteristics are well-defined across different operational gain settings.