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Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
Published on: November 16, 2018
Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor.
J A Griffiths1, D Chen, R Turchetta
1Department of Medical Physics and Bioengineering, University College London, London WC1E 6BT, United Kingdom. j.griffiths@mpb.ucl.ac.uk
The Review of Scientific Instruments
|April 5, 2011
Summary
This study presents an intensified CMOS active pixel sensor (APS) for low-light imaging. The system demonstrates suitability for low-light applications, with performance metrics analyzed across various gain levels.
Area of Science:
- Optoelectronics
- Image Sensors
- Low-Light Imaging
Background:
- Development of intensified CMOS active pixel sensor (APS) for low-light applications.
- Coupling of a high-gain, fast-light decay image intensifier to a prototype VANILLA APS via fiber optics.
Purpose of the Study:
- To investigate the performance parameters of the intensified VANILLA APS system.
- Evaluation under uniform 520 nm green light illumination across a range of image intensifier gain levels.
Main Methods:
- Utilized mean-variance analysis to assess sensor performance.
- Characterized parameters including saturation, variance, quantum efficiency, and dynamic range.
Main Results:
- APS saturation observed around 3050 Digital Units (DU).
- Maximum variance increased with image intensifier gain.
- Quantum efficiency varied exponentially from 260 to 1.6 across gain levels.
- Usable dynamic range decreased from 60 dB to 40 dB at higher gains.
Conclusions:
- The intensified VANILLA APS system exhibits suitability for low-light imaging applications.
- Performance characteristics are well-defined across different operational gain settings.
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