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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
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Bottom-gated epitaxial graphene.

Daniel Waldmann1, Johannes Jobst, Florian Speck

  • 1Lehrstuhl für Angewandte Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Staudtstr. 7, 91058 Erlangen, Germany.

Nature Materials
|April 5, 2011
PubMed
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Researchers developed bottom-gated epitaxial graphene devices using nitrogen-implanted silicon carbide. This breakthrough enables tailored graphene devices for various applications, demonstrating functionality across a wide temperature range.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Epitaxial graphene on silicon carbide (SiC) offers high quality and wafer-scale availability.
  • Charge carriers in epitaxial graphene follow the Dirac-Weyl Hamiltonian, exhibiting excellent mobility.
  • Bottom gating is crucial for many graphene experiments, especially in surface science, but challenging for epitaxial growth.

Purpose of the Study:

  • To present a reliable method for fabricating bottom-gated epitaxial graphene devices.
  • To enable tailored device engineering by controlling the gate structure's doping.
  • To demonstrate the functionality of these devices across a broad temperature spectrum.

Main Methods:

  • Nitrogen (N) implantation into a silicon carbide (SiC) wafer.

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  • Subsequent epitaxial graphene growth on the modified SiC substrate.
  • Fabrication and characterization of bottom-gated devices.

    • Main Results:

    • Successful fabrication of working bottom-gated epitaxial graphene devices.
    • Demonstration of device operation from 6 K to 300 K.
    • Identification of two distinct gating regimes, enabling controlled doping.

    Conclusions:

    • The developed scheme provides a reliable pathway for creating bottom-gated epitaxial graphene.
    • The ability to control doping opens significant engineering possibilities for novel graphene devices.
    • These devices are suitable for a wide range of experimental conditions and applications.