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Updated: Jun 3, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
Metallic transport in a monatomic layer of in on a silicon surface
Shiro Yamazaki1, Yoshikazu Hosomura, Iwao Matsuda
1Department of Physics, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan. Shiro.Yamazaki@physik.uni-hamburg.de
Abstract:
We have succeeded in detecting metallic transport in a monatomic layer of In on an Si(111) surface, Si(111)-sqrt[7]×sqrt[3]-In surface reconstruction, using the micro-four-point probe method. The In layer exhibited conductivity higher than the minimum metallic conductivity (the Ioffe-Regel criterion) and kept the metallic temperature dependence of resistivity down to 10 K. This is the first example of a monatomic layer, with the exception of graphene, showing metallic transport without carrier localization at cryogenic temperatures. By introducing defects on this surface, a metal-insulator transition occurred due to Anderson localization, showing hopping conduction.
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