Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD

Well-aligned tilted Zn-doped InN nanorods have been grown successfully on r-plane sapphire in a horizontal metal-organic chemical vapor deposition system. All of the nanorods are symmetrically tilted in two opposite directions. X-ray diffraction and transmission electron microscopy measurements show that the nanorods are single-crystalline and have exactly the same epitaxial orientation as the a-plane InN film. The nanorod has a new cross sectional shape of an axial symmetry pentagon and the axis of symmetry is the c-axis of the crystal. Zn dopant plays a crucial role in the growth progress, being an important factor in controlling the morphology of the InN nanomaterials and their properties.