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Related Concept Videos

Raman Spectroscopy Instrumentation: Overview01:26

Raman Spectroscopy Instrumentation: Overview

A conventional Raman spectrophotometer includes a laser source, a sample holding system, a wavelength selector, and a detector.
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Continuous-wave Raman laser pumped within a semiconductor disk laser cavity.

Daniele C Parrotta1, Walter Lubeigt, Alan J Kemp

  • 1Institute of Photonics, SUPA, University of Strathclyde, Wolfson Centre, 106 Rottenrow, Glasgow G4 0NW, UK. daniele.parrotta@strath.ac.uk

Optics Letters
|April 12, 2011
PubMed
Summary

Potassium gadolinium tungstate (KGd(WO₄)₂) Raman lasers were successfully pumped by a continuous-wave diode-pumped indium gallium arsenide semiconductor disk laser (SDL). This setup achieved 0.8 W output power at 1143 nm with 7.5% efficiency.

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Area of Science:

  • Laser physics
  • Solid-state lasers
  • Nonlinear optics

Background:

  • Semiconductor disk lasers (SDLs) offer high power and good beam quality.
  • Potassium gadolinium tungstate (KGd(WO₄)₂) is a promising material for Raman lasers.
  • Intracavity pumping can enhance laser efficiency.

Purpose of the Study:

  • To demonstrate efficient intracavity pumping of a KGd(WO₄)₂ Raman laser using an InGaAs SDL.
  • To characterize the performance of the coupled laser system.
  • To investigate the tuning capabilities of the Raman laser.

Main Methods:

  • A continuous-wave diode-pumped InGaAs SDL was used as the pump source.
  • The KGd(WO₄)₂ crystal was placed inside the SDL cavity for intracavity pumping.
  • The output power and spectrum of the Raman laser were measured.
  • The SDL wavelength was tuned to investigate Raman laser tuning.

Main Results:

  • The Raman laser threshold was achieved at 5.6 W of absorbed diode pump power.
  • An output power of up to 0.8 W at 1143 nm was demonstrated.
  • An optical conversion efficiency of 7.5% with respect to absorbed diode pump power was achieved.
  • Tuning the SDL resulted in a Raman laser output tunable between 1133 and 1157 nm.

Conclusions:

  • Intracavity pumping of KGd(WO₄)₂ Raman lasers with InGaAs SDLs is an effective method for achieving high-power, tunable output.
  • The demonstrated performance highlights the potential of this approach for various applications.
  • Further optimization could lead to even higher efficiencies and output powers.