Ultraviolet random lasing action from highly disordered n-AlN/p-GaN heterojunction.

Area of Science:

• Semiconductor Physics
• Optoelectronics
• Materials Science

Background:

• Random lasing offers a unique approach to light generation.
• Semiconductor heterojunctions are crucial for optoelectronic devices.
• Achieving room-temperature lasing is a key goal in photonics.

Purpose of the Study:

• To demonstrate room-temperature random lasing in an n-AlN/p-GaN heterojunction.
• To investigate the role of material structure in enabling random lasing.
• To characterize the lasing properties of the fabricated heterojunction.

Main Methods:

• Fabrication of an n-AlN/p-GaN heterojunction using radio frequency magnetron sputtering.
• Characterization of optical emission spectra under forward bias.
• Analysis of lasing peak characteristics, including linewidth and wavelength.

Main Results:

• Room-temperature random lasing was successfully achieved at approximately 370 nm.
• The disordered n-AlN layer effectively provided optical feedback through scattering.
• The p-GaN:Mg layer facilitated optical amplification, sustaining the lasing effect.
• Observed lasing peaks exhibited linewidths less than 0.4 nm.
• Lasing behavior aligned with theoretical predictions for random lasers.

Conclusions:

• The n-AlN/p-GaN heterojunction is a viable platform for room-temperature random lasing.
• The combination of scattering and amplification in the heterostructure is essential for random laser operation.
• This work contributes to the development of novel laser sources for various applications.