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Core-shell InP-CdS nanowires: fabrication and study.

Z Zanolli¹, B A Wacaser, M-E Pistol

¹Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, 22100 Lund, Sweden.

Journal of Physics. Condensed Matter : an Institute of Physics Journal

|April 13, 2011

Summary

Researchers explored indium phosphide (InP) nanowires, finding state filling effects. A new wet chemical method to add a cadmium sulfide (CdS) shell decreased luminescence, requiring further optimization for practical applications.

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Area of Science:

Semiconductor Nanostructures
Materials Science
Optoelectronics

Background:

Indium phosphide (InP) nanowires are promising for electronic and optoelectronic devices.
Organometallic vapor phase epitaxy (OMVPE) is a common fabrication method for InP nanowires.
Understanding their optical properties, such as luminescence, is crucial for device applications.

Purpose of the Study:

To investigate the photoluminescence properties of InP nanowires under varying excitation power.
To develop a wet chemical method for growing a cadmium sulfide (CdS) shell on InP nanowires.
To evaluate the impact of CdS shell deposition on the luminescence efficiency of InP nanowires.

Main Methods:

Fabrication of InP nanowires using organometallic vapor phase epitaxy (OMVPE).

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Photoluminescence (PL) spectroscopy measurements on individual InP nanowires.

Wet chemical deposition of a CdS shell onto InP nanowires.

Comparative PL analysis of bare and CdS-coated InP nanowires.

Main Results:

Photoluminescence measurements revealed evidence of state filling in InP nanowires with increasing excitation power density.
A wet chemical procedure was successfully developed to grow CdS shells on InP nanowires.
The luminescence efficiency of InP nanowires decreased after the deposition of the CdS shell.

Conclusions:

The wet chemical CdS capping procedure requires further optimization to improve the emission properties of InP nanowires.
Potential improvements include increasing bath temperature and/or UV illumination during the capping process.
Optimized CdS-capped InP nanowires could become technically useful for various applications.