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Updated: Jun 2, 2026

Atomically Traceable Nanostructure Fabrication

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

Lithography, metrology and nanomanufacturing.

J Alexander Liddle¹, Gregg M Gallatin

¹Center for Nanoscale Science & Technology, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA. liddle@nist.gov

|April 14, 2011

Summary

This summary is machine-generated.

Future nanomanufacturing requires inexpensive, real-time metrology for process control. Current top-down semiconductor fabrication relies on expensive metrology, but emerging bottom-up techniques need cost-effective, high-speed measurement solutions.

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Area of Science:

Nanotechnology and Materials Science
Manufacturing Engineering

Background:

Semiconductor chip manufacturing, predominantly using top-down lithography, demands high perfection and expensive metrology.
Emerging nanomanufacturing techniques, often bottom-up, target lower-cost products and may tolerate less perfection.

Purpose of the Study:

To review and compare top-down and bottom-up nanofabrication techniques.
To analyze the distinct metrology requirements for different nanomanufacturing approaches.

Main Methods:

Review of current top-down lithography for semiconductor fabrication.
Analysis of emerging bottom-up nanofabrication methods (e.g., self-assembly, nano-imprint).
Comparison of metrology costs and real-time needs for both approaches.

Main Results:

Top-down fabrication necessitates costly, often statistical, online metrology due to perfection requirements.
Bottom-up techniques, while less perfection-dependent, require cost-effective, real-time online metrology for process control due to inherent variability.

Conclusions:

Future nanomanufacturing will likely require "cheap" nanometre-scale metrology operating at high speeds (GHz rates) within the production stream.
A shift towards integrated, high-throughput metrology solutions is essential for the economic viability of novel nanomanufacturing processes.