Low loss silicon waveguides for the mid-infrared

Area of Science:

• Photonics
• Materials Science
• Optical Engineering

Background:

• Silicon-on-insulator (SOI) is a mature platform for near-infrared photonics.
• Higher absorption losses in silicon dioxide can limit SOI performance at longer wavelengths.

Purpose of the Study:

• To measure propagation losses for SOI waveguides at an extended wavelength of 3.39 µm.
• To evaluate silicon on porous silicon (SiPSi) waveguides at 3.39 µm.

Main Methods:

• Waveguide fabrication and propagation loss measurement techniques.
• Characterization of optical loss at 3.39 µm for both SOI and SiPSi waveguides.

Main Results:

• Achieved propagation losses of 0.6-0.7 dB/cm for SOI waveguides at 3.39 µm.
• Reported propagation loss measurements for SiPSi waveguides at the same wavelength.

Conclusions:

• SOI demonstrates viability for longer wavelength applications beyond the conventional near-infrared.
• SiPSi offers an alternative waveguide platform for investigation at 3.39 µm.