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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Zener Diodes01:16

Zener Diodes

Zener diodes are specialized semiconductor devices designed to operate in the reverse breakdown region, where they allow current to flow into the cathode, making it positive relative to the anode. This reverse operation distinguishes Zener diodes from conventional diodes and enables their use in various applications, most notably as voltage regulators. One of the defining characteristics of Zener diodes is their nearly vertical I-V (current-voltage) characteristic curve above a certain...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...

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Related Experiment Video

Updated: Jun 2, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Graphene-silicon Schottky diodes.

Chun-Chung Chen1, Mehmet Aykol, Chia-Chi Chang

  • 1Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, United States.

Nano Letters
|April 27, 2011
PubMed
Summary
This summary is machine-generated.

Researchers created graphene-silicon Schottky diodes, demonstrating rectifying behavior. Temperature affects the ideality factor, but not the number of graphene layers, paving the way for new electronic devices.

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Electrical Engineering

Background:

  • Graphene's unique electronic properties make it a promising material for next-generation electronic devices.
  • Schottky diodes are crucial components in various electronic applications, including rectification and photodetection.
  • Integrating graphene with silicon offers a pathway to leverage the strengths of both materials.

Purpose of the Study:

  • To fabricate and characterize graphene-silicon Schottky diodes using mechanically exfoliated graphene.
  • To investigate the current-voltage (I-V) characteristics and barrier properties of these diodes.
  • To explore the influence of temperature and graphene layer number on diode performance.

Main Methods:

  • Fabrication of graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene onto n-type and p-type silicon substrates.
  • Measurement of current-voltage (I-V) characteristics at various temperatures (100 K, 300 K, 400 K).
  • Analysis of barrier energy, ideality factor, and photocurrent generation.

Main Results:

  • Successfully fabricated graphene-silicon Schottky diodes exhibiting clear rectifying behavior.
  • Determined barrier energies of 0.41 eV (n-type Si) and 0.45 eV (p-type Si) at room temperature.
  • Observed a strong temperature dependence of the ideality factor, while the number of graphene layers had minimal impact.
  • Demonstrated photocurrent generation due to the optical transparency of graphene, with spatially resolved measurements highlighting device inhomogeneity and series resistance.

Conclusions:

  • Graphene-silicon Schottky diodes are viable for electronic applications, offering rectifying properties.
  • Temperature is a critical factor influencing the ideality factor of these diodes.
  • Device performance is affected by factors such as inhomogeneity and series resistance, necessitating further optimization for practical applications.