Related Experiment Video
Updated: Jun 2, 2026

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Published on: April 18, 2019
Self-eliminating instrumental frequency response from free carrier absorption signals for silicon wafer
1Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Shuangliu, Chengdu, Sichuan 610209, China.
Abstract:
Accurate determination of electronic transport properties of semiconductor wafers with modulated free carrier absorption (MFCA) and multiparameter fitting requires the total elimination of instrumental response from the MFCA signals. In this paper, an approach to eliminate the effect of instrumental response on the frequency dependence of MFCA amplitude and phase is developed both theoretically and experimentally to simultaneously determine the transport properties (minority-carrier lifetime, carrier diffusion coefficient, and front surface recombination velocity) of silicon wafers. Experimental results showed that with the proposed method the instrumental frequency response was fully eliminated from the experimental MFCA data and had no impact on the multiparameter fitting, while with conventional methods the accuracy of the fitted transport parameters was influenced detrimentally by the errors of the measured instrumental frequency responses, in particular for the minority-carrier lifetime and the front surface recombination velocity.

