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Measurements of Strain01:27

Measurements of Strain

Strain quantifies the deformation of a material under force, typically measured as normal strain, which represents the change in length when compared with the original length. Electrical strain gauges are used for enhanced accuracy. These devices consist of a conductive wire mounted on a paper backing that adheres to the material's surface. These gauges operate on the piezoresistive effect, where the wire's electrical resistance changes in response to mechanical deformation. The strain gauge...
Strain and Elastic Modulus01:15

Strain and Elastic Modulus

The quantity that describes the deformation of a body under stress is known as strain. Strain is given as a fractional change in either length, volume, or geometry under tensile, volume (also known as bulk), or shear stress, respectively, and is a dimensionless quantity. The strain experienced by a body under tensile or compressive stress is called tensile or compressive strain, respectively. In contrast, the strain experienced under bulk stress and shear stress is known as volume and shear...
Three-Dimensional Analysis of Strain01:29

Three-Dimensional Analysis of Strain

Three-dimensional strain analysis is crucial for understanding how materials deform under stress, particularly in elastic, homogeneous materials. This method employs principal stress axes to simplify complex stress states into more understandable forms. Subjected to stress, a small cubic element within a material either expands or contracts along these axes, transforming into a rectangular parallelepiped. This transformation effectively illustrates the material's deformation. The principal...

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Related Experiment Video

Updated: Jun 2, 2026

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes
06:56

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes

Published on: May 23, 2017

A micro-optical modulation spectroscopy technique for local strain measurement.

H Chouaib1, M E Murtagh, P V Kelly

  • 1Optical Metrology Innovations Ltd., 2200 Cork Airport Business Park, Cork Airport, Co. Cork, Ireland. houssam.chouaib@kla-tencor.com

The Review of Scientific Instruments
|May 3, 2011
PubMed
Summary

We developed a fast, high-throughput optical modulation spectroscopy method for analyzing strain in silicon wafers at the micrometer scale. This technique enables rapid, precise measurements for semiconductor process control.

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Related Experiment Videos

Last Updated: Jun 2, 2026

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes
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Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes

Published on: May 23, 2017

Production of a Strain-Measuring Device with an Improved 3D Printer
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Measurement of Compressive Stress-Strain Response at Small-Strains
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Measurement of Compressive Stress-Strain Response at Small-Strains

Published on: December 5, 2025

Area of Science:

  • Materials Science
  • Optical Spectroscopy
  • Semiconductor Physics

Background:

  • Optical modulation spectroscopy is crucial for characterizing semiconductor materials.
  • Analyzing process-induced strain in silicon wafers is essential for device performance.
  • Existing methods may lack the throughput or resolution for detailed strain mapping.

Purpose of the Study:

  • To present a high-throughput optical modulation spectroscopy method.
  • To enable micrometer-scale (10 μm) strain analysis in silicon wafers.
  • To optimize optical components for minimal signal loss and rapid data acquisition.

Main Methods:

  • Utilized optical modulation spectroscopy, including photoreflectance and photoluminescence.
  • Integrated a polarizing beamsplitter and Fresnel rhomb for efficient beam separation.
  • Employed a rapid detection system for swift spectrum acquisition (seconds).

Main Results:

  • Achieved micrometer-scale resolution for spectroscopic analysis.
  • Demonstrated a high-throughput capability for strain mapping.
  • Minimized optical losses in the system for enhanced signal detection.

Conclusions:

  • The developed method offers a significant advancement in analyzing strain in silicon wafers.
  • High-throughput, high-resolution spectroscopy facilitates detailed process control in semiconductor manufacturing.
  • The optimized optical design and rapid detection system enable efficient material characterization.