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Determination of Crystal Structures01:29

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In the late 1800s, the revelation that light extended beyond visible wavelengths led to the discovery of X-rays by Wilhelm Roentgen. Recognized as high-energy electromagnetic radiation with short wavelengths, X-rays prompted exploration into their interaction with crystals. Max von Laue proposed in 1912 that the periodic arrangement of atoms, ions, or molecules in crystals would cause them to diffract X-rays, a hypothesis confirmed through experiments with copper sulfate and zinc sulfide...

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High Pressure Single Crystal Diffraction at PX^2
11:32

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Published on: January 16, 2017

High pressure studies on RuIn3 single crystal.

Awadhesh Mani1, Shilpam Sharma, Sharat Chandra

  • 1Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, Tamil Nadu, India. mani@igcar.gov.in

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|May 5, 2011
PubMed
Summary

Electrical resistivity studies on RuIn3 single crystals reveal a pressure-induced insulator-to-metal transition around 1.2 GPa. Increasing pressure monotonically decreases the material's energy gap, consistent with experimental observations.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Solid-State Physics

Background:

  • Electrical resistivity of RuIn3 single crystals exhibits complex behavior influenced by temperature and pressure.
  • Understanding the electronic properties of RuIn3 is crucial for exploring its potential applications.

Purpose of the Study:

  • To investigate the temperature- and pressure-dependent electrical resistivity of RuIn3 single crystals.
  • To determine the effect of pressure on the electronic band structure and phase transitions in RuIn3.

Main Methods:

  • Temperature-dependent electrical resistivity measurements from 4-300 K.
  • Pressure-dependent electrical resistivity measurements up to 5 GPa.
  • First-principles band structure calculations.

Main Results:

  • Intrinsic semiconducting behavior observed at temperatures above 275 K.
  • Impurity effects dominate low-temperature resistivity.
  • An insulator-to-metal transition occurs around 1.2 GPa at low temperatures.
  • Band structure calculations show a monotonic decrease in the energy gap with increasing pressure (0.222 eV at 0 GPa to 0.167 eV at 8 GPa).

Conclusions:

  • Pressure plays a significant role in tuning the electronic properties of RuIn3.
  • The observed insulator-to-metal transition is attributed to the pressure-induced reduction of the energy gap.
  • Experimental findings are consistent with theoretical band structure calculations.