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Updated: Jun 2, 2026

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems
Published on: April 28, 2016
Operation of a Raman laser in bulk silicon
Hanjo Rhee1, Oliver Lux, Stefan Meister
1Institute of Optics and Atomic Physics, Technische Universität Berlin, 10623 Berlin, Germany. hanjo.rhee@physik.tu‐berlin.de
Abstract:
A Raman laser based on a bulk silicon single crystal with 1.127 μm emission wavelength is demonstrated. The Si crystal with 30 mm length was placed into an external cavity and pumped by a Q-switched Nd:YAG master oscillator power amplifier system. Strong defocusing of the pump and Raman laser beam by free carriers was compensated by an intracavity lens. Raman laser operation with a pulse duration of 2.5 ns was identified by a Raman laser threshold significantly lower than the single-pass stimulated Raman-scattering threshold. Linear absorption losses of the 1.06415 μm pump radiation are strongly reduced by cooling the Si crystal to a temperature of 10 K.
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