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Updated: Jun 2, 2026

Optical Trapping of Nanoparticles

Optical Trapping of Nanoparticles

Published on: January 15, 2013

Photodetection with active optical antennas.

Mark W Knight¹, Heidar Sobhani, Peter Nordlander

¹Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, USA.

Science (New York, N.Y.)

|May 10, 2011

Summary

This summary is machine-generated.

Metallic nanoantennas can now harvest light and detect it. This novel dual-function structure generates photocurrent from plasmon decay, creating compact, sensitive light detectors with extended spectral response.

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Area of Science:

Optoelectronics
Plasmonics
Nanotechnology

Background:

Nanoantennas are crucial for light harvesting, while photodiodes enable photodetection.
These two functions have traditionally been separate and independent.
Integrating these functionalities into a single device presents a significant challenge.

Purpose of the Study:

To demonstrate a single nanostructure that combines light harvesting and photodetection.
To investigate the mechanism of photocurrent generation in such a device.
To characterize the performance of this novel dual-function light detector.

Main Methods:

Fabrication of a metallic nanoantenna integrated with a semiconductor.
Coupling photons into the nanoantenna to excite surface plasmons.
Measuring the photocurrent generated due to hot electron injection over a potential barrier.

Main Results:

Successful integration of light harvesting and photodetection into one nanoantenna structure.
Observation of photocurrent generation resulting from resonant plasmon decay and hot electron injection.
Demonstration of a compact, wavelength-resonant, and polarization-specific light detector.

Conclusions:

The developed dual-function nanoantenna structure effectively combines light harvesting and photodetection.
This technology offers a new pathway for creating highly compact and sensitive optical detectors.
The device exhibits unique spectral response characteristics, extending below the semiconductor band edge.