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Updated: Jun 2, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Toward wafer scale fabrication of graphene based spin valve devices
Ahmet Avsar1, Tsung-Yeh Yang, Sukang Bae
1Graphene Research Center & Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.
Abstract:
We demonstrate injection, transport, and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer and bilayer graphene. We observe spin relaxation times comparable to those reported for exfoliated graphene samples demonstrating that chemical vapor deposition specific structural differences such as nanoripples do not limit spin transport in the present samples. Our observations make Cu-CVD graphene a promising material of choice for large scale spintronic applications.

