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Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide

J D Burton1, E Y Tsymbal

  • 1Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, USA. jdburton1@gmail.com

Physical Review Letters
|May 17, 2011
PubMed
Summary

A giant tunneling electroresistance effect is demonstrated in ferroelectric tunnel junctions. The magnetoelectric effect at the interface acts as a spin valve, filtering current and causing a large resistive switching effect.

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