Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Microbial dysbiosis in oral potentially malignant disorders: A systematic review.

Journal of stomatology, oral and maxillofacial surgery·2026
Same author

Population-specific genomic risk markers for oral and maxillofacial malignancies in a high tobacco-exposure cohort from Eastern Uttar Pradesh, India.

Bioinformation·2026
Same author

Intratumoral Budding in Preoperative Biopsies of Oral Squamous Cell Carcinoma: Prognostic Value in Comparison With WHO Grading.

Oral diseases·2026
Same author

"Reverse Bay of Bengal" Modification of Grisotti Flap for Reconstruction of Central Quadrant Tumors.

Indian journal of surgical oncology·2025
Same author

Unveiling mechanistic effects of mast cell in the progression of fibrosis and malignant transformation of oral submucous fibrosis: a systematic review and meta-analysis.

Biotechnic & histochemistry : official publication of the Biological Stain Commission·2025
Same author

Flat-panel laser displays through large-scale photonic integrated circuits.

Nature·2025

Related Experiment Video

Updated: Jun 2, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

Chalcogenide phase-change memory nanotubes for lower writing current operation.

Yeonwoong Jung1, Rahul Agarwal, Chung-Ying Yang

  • 1Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.

Nanotechnology
|May 17, 2011
PubMed
Summary
This summary is machine-generated.

We synthesized antimony-doped tellurium-rich nanotubes for memory devices. These nanotubes offer low writing currents for power-efficient operation but have limitations in resistance ratio and switching cycles due to tellurium's properties.

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Related Experiment Videos

Last Updated: Jun 2, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Electronics

Background:

  • Nanostructured materials are crucial for next-generation electronic devices.
  • Tellurium (Te)-based materials show promise for resistive switching memory applications.
  • Antimony (Sb) doping can modify material properties for enhanced performance.

Purpose of the Study:

  • To synthesize and characterize antimony-doped, tellurium-rich nanotubes.
  • To investigate the memory switching properties of these novel nanostructures.
  • To understand the influence of material properties and geometry on device performance.

Main Methods:

  • Synthesis of Sb-doped Te-rich nanotubes via a chemical vapor deposition (CVD) method.
  • Fabrication of nanotube-based memory devices.
  • Electrical characterization including resistance measurements and pulse application.

Main Results:

  • Successfully synthesized Sb-doped Te-rich nanotubes with small cross-sectional areas.
  • Demonstrated memory switching behavior in the nanotube devices.
  • Observed significantly low writing currents, beneficial for power efficiency.
  • Identified limitations in resistance ratio and cyclic switching due to intrinsic Te properties.

Conclusions:

  • Sb-doped Te-rich nanotubes represent a new class of nanostructured memory elements.
  • The small dimensions of nanotubes lead to low operating currents.
  • Material properties of tellurium limit the overall memory performance.
  • Further research can explore optimizing these materials for improved memory applications.