Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Beyond sacral slope: a new quantitative paradigm for Roussouly classification.

European spine journal : official publication of the European Spine Society, the European Spinal Deformity Society, and the European Section of the Cervical Spine Research Society·2026
Same author

Phase transitions and chemical segregation in Ge-rich GST based phase change memory cells.

Scientific reports·2025
Same author

How to Reduce the Risk of Mechanical Failures in Adult Deformity Surgery: Comparing GAP Score and Roussouly Type Restoration.

Global spine journal·2025
Same author

The use of machine learning for the prediction of response to follow-up in spine registries.

International journal of medical informatics·2025
Same author

Should the pelvis be included? An analysis of distal junctional failure risk factors in correcting adult spinal deformity in women with fusion to L5.

European spine journal : official publication of the European Spine Society, the European Spinal Deformity Society, and the European Section of the Cervical Spine Research Society·2024
Same author

The Positive Side Effect of Anterior Cervical Decompression and Fusion on Axial Neck Pain.

Global spine journal·2024

Related Experiment Video

Updated: Jun 2, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Nano-scaled chalcogenide-based memories.

Andrea Redaelli1, Agostino Pirovano

  • 1R&D Technology Development, Numonyx, Agrate Brianza (MB), Italy. andrea.redaelli@numonyx.com

Nanotechnology
|May 17, 2011
PubMed
Summary

Phase change memory (PCM) reliability is confirmed at scaled dimensions. Nanoscale nucleation dynamics significantly impact PCM device retention and performance.

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Phase Change Memory (PCM) technology is nearing product maturity at 90/65 nm nodes, with 45 nm development underway.
  • Scaling reduces PCM cell size to ~150 nm² active area and ~10⁴ nm³ active volume, entering the nanotechnology domain.
  • Device reliability is critical at these reduced dimensions.

Purpose of the Study:

  • Investigate the reliability of scaled PCM devices.
  • Analyze the impact of phase transition dynamics on device performance and retention.
  • Provide physical insights into nucleation and growth mechanisms.

Main Methods:

  • Device cycling performance evaluation.
  • Analysis of amorphous to crystalline state phase transitions.

More Related Videos

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics
04:09

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics

Published on: August 30, 2024

Related Experiment Videos

Last Updated: Jun 2, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics
04:09

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics

Published on: August 30, 2024

  • Crystallization Monte Carlo modeling for dispersion analysis.

    • Main Results:

    • PCM device cycling performance remains robust for both transistor and storage elements.
    • Stochastic nano-nuclei percolation is key to PCM device retention.
    • Monte Carlo modeling reveals dispersion in crystallization times.

    Conclusions:

    • Scaled PCM devices exhibit reliable cycling performance.
    • Understanding nucleation dynamics is crucial for optimizing PCM retention.
    • The study provides physical insights into nanoscale phase transition phenomena.