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Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer
Yingtao Li1, Shibing Long, Hangbing Lv
1Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, People's Republic of China.
Abstract:
The stabilization of the resistive switching characteristics is important to resistive random access memory (RRAM) device development. In this paper, an alternative approach for improving resistive switching characteristics in ZrO(2)-based resistive memory devices has been investigated. Compared with the Cu/ZrO(2)/Pt structure device, by embedding a thin TiO(x) layer between the ZrO(2) and the Cu top electrode, the Cu/TiO(x)-ZrO(2)/Pt structure device exhibits much better resistive switching characteristics. The improvement of the resistive switching characteristics in the Cu/TiO(x)-ZrO(2)/Pt structure device might be attributed to the modulation of the barrier height at the electrode/oxide interfaces.
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