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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Related Experiment Video

Updated: Jun 1, 2026

Synthesis of Nine-atom Deltahedral Zintl Ions of Germanium and their Functionalization with Organic Groups
08:15

Synthesis of Nine-atom Deltahedral Zintl Ions of Germanium and their Functionalization with Organic Groups

Published on: February 11, 2012

Titanium germanium anti-monide, TiGeSb.

Robert Lam1, Arthur Mar

  • 1Department of Chemistry, University of Alberta, Edmonton, AB, Canada T6G 2G2.

Acta Crystallographica. Section E, Structure Reports Online
|May 18, 2011
PubMed
Summary

Titanium Germanium Antimonide (TiGeSb) crystallizes in the PbFCl-type structure. This structure features titanium atoms within square anti-prisms formed by alternating germanium and antimony atom nets.

Area of Science:

  • Solid-state chemistry
  • Crystallography
  • Materials science

Background:

  • Understanding crystal structures is crucial for predicting material properties.
  • The PbFCl- and ZrSiS-type structures are common motifs in intermetallic compounds.

Purpose of the Study:

  • To determine the crystal structure of Titanium Germanium Antimonide (TiGeSb).
  • To describe the atomic arrangement and coordination within the TiGeSb structure.

Main Methods:

  • Crystallographic analysis based on X-ray diffraction data (implied).
  • Description of atomic positions and coordination polyhedra.

Main Results:

  • TiGeSb adopts either the PbFCl- or ZrSiS-type crystal structure.

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Growth of Gold Dendritic Nanoforests on Titanium Nitride-coated Silicon Substrates

Published on: June 3, 2019

Related Experiment Videos

Last Updated: Jun 1, 2026

Synthesis of Nine-atom Deltahedral Zintl Ions of Germanium and their Functionalization with Organic Groups
08:15

Synthesis of Nine-atom Deltahedral Zintl Ions of Germanium and their Functionalization with Organic Groups

Published on: February 11, 2012

Growth of Gold Dendritic Nanoforests on Titanium Nitride-coated Silicon Substrates
05:02

Growth of Gold Dendritic Nanoforests on Titanium Nitride-coated Silicon Substrates

Published on: June 3, 2019

  • Titanium atoms are coordinated within monocapped square anti-prisms.
  • The structure consists of alternating square nets of Germanium and Antimony atoms.
  • Conclusions:

    • The determined crystal structure provides a basis for understanding TiGeSb's physical and chemical properties.
    • The unique atomic arrangement highlights the interplay between different elements in intermetallic compounds.