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Published on: November 30, 2012
Threshold gain analysis in GaN-based photonic crystal surface emitting lasers
Peng-Hsiang Weng1, Tzeng-Tsong Wu, Tien-Chang Lu
1Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan.
Optics Letters
|May 20, 2011
Summary
We analyzed gallium nitride (GaN)-based photonic crystal surface emitting lasers (PCSELs) using multiple scattering methods. Our findings match experimental results for lasing modes and threshold gains in various PCSEL designs.
Area of Science:
- Optics and Photonics
- Materials Science
- Semiconductor Physics
Background:
- Photonic Crystal Surface Emitting Lasers (PCSELs) offer unique light-emitting properties.
- Gallium Nitride (GaN) is a key material for visible and UV optoelectronics.
- Understanding lasing modes and threshold gains is crucial for PCSEL optimization.
Purpose of the Study:
- To analyze threshold gains and lasing modes in GaN-based PCSELs.
- To validate simulation results with experimental data for different boundary shapes.
- To investigate the applicability of the multiple scattering method (MSM) for PCSEL analysis.
Main Methods:
- Utilized the multiple scattering method (MSM) for theoretical analysis.
- Fabricated and optically pumped GaN-based PCSELs with varying boundary shapes.
- Employed angled resolved spectroscopy to identify lasing modes.
Main Results:
- The lasing mode at the Γ band edge was accurately identified using angled resolved spectroscopy.
- Experimental results for lasing modes closely matched MSM calculations.
- Threshold conditions determined by optical pumping agreed well with simulation predictions.
- The MSM proved effective for analyzing GaN-based PCSELs.
Conclusions:
- The study successfully analyzed and validated threshold gains and lasing modes in GaN-based PCSELs.
- MSM is a reliable method for predicting PCSEL performance.
- Experimental validation confirms the theoretical models for different boundary shapes.
