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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Published on: May 24, 2020

Morphology optimization for the fabrication of high mobility thin-film transistors

Xiangnan Sun1, Lei Zhang, Chong-an Di

  • 1Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P.R. China.

Advanced Materials (Deerfield Beach, Fla.)
|May 25, 2011
PubMed
Abstract

No abstract available in PubMed .

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