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Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Related Experiment Video

Updated: Jun 1, 2026

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells
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Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Published on: November 5, 2014

n-Channel semiconductor materials design for organic complementary circuits.

Hakan Usta1, Antonio Facchetti, Tobin J Marks

  • 1Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States.

Accounts of Chemical Research
|May 28, 2011
PubMed
Summary
This summary is machine-generated.

Researchers developed new electron-transporting organic semiconductors for flexible electronics. These materials demonstrate high performance and stability, paving the way for advanced organic field-effect transistors (OFETs) and printed circuitry.

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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Last Updated: Jun 1, 2026

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells
14:37

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Published on: November 5, 2014

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Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

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Area of Science:

  • Materials Science
  • Organic Electronics
  • Semiconductor Physics

Background:

  • Organic semiconductors offer advantages over inorganic materials, including flexibility and low-cost processing.
  • High-performance n-channel (electron-transporting) organic semiconductors are crucial for complementary organic circuits but remain relatively rare.
  • Existing p-channel materials are well-developed, highlighting the need for advancements in n-channel counterparts for applications like organic field-effect transistors (OFETs).

Purpose of the Study:

  • To synthesize and characterize novel, electron-deficient n-channel organic semiconductors based on oligothiophene, arylenediimide, and (bis)indenofluorene skeletons.
  • To investigate the structure-property relationships governing charge transport in these materials.
  • To advance the development of high-performance n-channel organic semiconductors for applications in flexible electronics and printed circuitry.

Main Methods:

  • Synthesis and characterization of a library of structurally related organic semiconductors.
  • Detailed structure-property relationship investigations using optical, electrochemical, thermal, microstructural (single-crystal and thin-film), and electrical measurements.
  • Density Functional Theory (DFT) computations to complement experimental data and understand charge transport mechanisms.

Main Results:

  • Development of high-performance n-channel oligothiophenes with perfluoroalkyl/arene substituents and carbonyl functionalities, exhibiting good carrier mobilities and air stability.
  • Achieved record electron mobilities up to 0.64 cm²/V·s in cyano-functionalized arylenediimide derivatives, demonstrating excellent air stability.
  • Demonstrated solution-processable ladder-type macromolecular semiconductors with ambient stability and high electron mobility (0.16 cm²/V·s), and polymeric semiconductors with mobilities up to 0.85 cm²/V·s.

Conclusions:

  • Established clear correlations between structural parameters and charge transport properties in n-channel organic semiconductors.
  • Provided fundamental insights into charge transport mechanisms through combined experimental and computational approaches.
  • Developed a roadmap for designing high-performance n-channel organic semiconductors, essential for creating functional complementary organic circuitry.