Strain induced ferroelectricity in GdN: first-principles calculations

H M Liu1, C Y Ma, C Zhu

  • 1Laboratory of Solid State Microstructures, Nanjing University, Nanjing, People's Republic of China.

Summary

Tensile strain can induce ferroelectricity in Gadolinium Nitride (GdN) thin films. This discovery opens possibilities for novel multiferroic materials with strain-tunable properties.