Switching of BJT
Metal-Semiconductor Junctions
P-N junction
Biasing of Metal-Semiconductor Junctions
Characteristics of JFET
Biasing of P-N Junction
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Updated: Jun 1, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
E G Petrov1, Ye V Shevchenko, V May
1Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, Metrologichna Street 14-B, UA-03680 Kiev, Ukraine. epetrov@bitp.kiev.ua
We present a unified theory for transient and steady-state current in molecular junctions. Transient currents can exceed steady-state values due to rapid molecular charging or discharging processes.
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