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Updated: Jun 1, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
Improved arrayed-waveguide-grating layout avoiding systematic phase errors
Nur Ismail1, Fei Sun, Gabriel Sengo
1MESA + Institute for Nanotechnology, University of Twente, Enschede, The Netherlands. n.ismail@ewi.utwente.nl
Abstract:
We present a detailed description of an improved arrayed-waveguide-grating (AWG) layout for both, low and high diffraction orders. The novel layout presents identical bends across the entire array; in this way systematic phase errors arising from different bends that are inherent to conventional AWG designs are completely eliminated. In addition, for high-order AWGs our design results in more than 50% reduction of the occupied area on the wafer. We present an experimental characterization of a low-order device fabricated according to this geometry. The device has a resolution of 5.5 nm, low intrinsic losses (< 2 dB) in the wavelength region of interest for the application, and is polarization insensitive over a wide spectral range of 215 nm.

