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Single mode emission and non-stochastic laser system based on disordered point-sized structures: toward a tuneable

R Bardoux1, A Kaneta, M Funato

  • 1Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan. richard.bardoux@optomater.kuee.kyoto-u.ac.jp

Optics Express
|June 7, 2011
PubMed
Summary

Researchers achieved stable, tunable random lasing from indium gallium nitride/gallium nitride (InGaN/GaN) quantum disks. This cavity-free approach offers a low-cost alternative for developing advanced laser systems.

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Area of Science:

  • Optics and Photonics
  • Materials Science
  • Semiconductor Physics

Background:

  • Random lasers offer a cavity-free alternative to conventional lasers, utilizing light interference in disordered media for feedback.
  • Traditional fabrication of laser cavities can be complex and expensive.
  • Spectral and temporal uncertainties are often inherent properties of random laser systems due to their feedback mechanism.

Purpose of the Study:

  • To investigate random laser action in an auto-organized indium gallium nitride/gallium nitride (InGaN/GaN) quantum disks ensemble.
  • To explore the potential for stable and tunable random lasing from nanostructured gain media.
  • To assess the role of disordered media in developing cost-effective quantum dot and upconversion laser systems.

Main Methods:

  • Experimental investigation of random laser action using two-photon absorption.
  • Utilizing an auto-organized InGaN/GaN quantum disks ensemble as the gain medium.
  • Characterization of emission properties from point-sized nanostructures.

Main Results:

  • Evidence of random lasing action based on a gain medium composed of discrete, point-sized InGaN/GaN structures.
  • Observation of a stabilized and individual emission mode, similar to conventional semiconductor lasers.
  • Demonstration that controlling the emission energy of nanostructures enables tunable and stable random laser output.

Conclusions:

  • Random laser action can be achieved from discrete nanostructures within a disordered medium.
  • The InGaN/GaN quantum disk system provides a pathway to tunable and stable random lasers.
  • Disordered media are crucial for the development of low-cost quantum dot and upconversion lasers.