Single mode emission and non-stochastic laser system based on disordered point-sized structures: toward a tuneable...

Area of Science:

• Optics and Photonics
• Materials Science
• Semiconductor Physics

Background:

• Random lasers offer a cavity-free alternative to conventional lasers, utilizing light interference in disordered media for feedback.
• Traditional fabrication of laser cavities can be complex and expensive.
• Spectral and temporal uncertainties are often inherent properties of random laser systems due to their feedback mechanism.

Purpose of the Study:

• To investigate random laser action in an auto-organized indium gallium nitride/gallium nitride (InGaN/GaN) quantum disks ensemble.
• To explore the potential for stable and tunable random lasing from nanostructured gain media.
• To assess the role of disordered media in developing cost-effective quantum dot and upconversion laser systems.

Main Methods:

• Experimental investigation of random laser action using two-photon absorption.
• Utilizing an auto-organized InGaN/GaN quantum disks ensemble as the gain medium.
• Characterization of emission properties from point-sized nanostructures.

Main Results:

• Evidence of random lasing action based on a gain medium composed of discrete, point-sized InGaN/GaN structures.
• Observation of a stabilized and individual emission mode, similar to conventional semiconductor lasers.
• Demonstration that controlling the emission energy of nanostructures enables tunable and stable random laser output.

Conclusions:

• Random laser action can be achieved from discrete nanostructures within a disordered medium.
• The InGaN/GaN quantum disk system provides a pathway to tunable and stable random lasers.
• Disordered media are crucial for the development of low-cost quantum dot and upconversion lasers.